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| NTR1P02LT1 Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features http://onsemi.com V(BR)DSS -20 V RDS(on) Max 220 mW P-Channel D ID Max -1.3 A * Low RDS(on) Provides Higher Efficiency and Extends Battery Life * Miniature SOT-23 Surface Mount Package Saves Board Space * Pb-Free Packages are Available MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, (1/8 from case for 10 s) Symbol VDSS VGS ID Value -20 12 -1.3 -4.0 400 - 55 to 150 300 260 Unit V V 3 IDM PD TJ, Tstg RqJA TL A A mW C C/W C 1 2 SOT-23 CASE 318 STYLE 21 G S MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 P02 M G G 1 Gate 2 Source Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. P02 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTR1P02LT1 NTR1P02LT1G NTR1P02LT3 NTR1P02LT3G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 May, 2006 - Rev. 8 1 Publication Order Number: NTR1P02LT1/D NTR1P02LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = -10 mA) Zero Gate Voltage Drain Current (VDS = -16 V, VGS = 0 V) (VDS = -16 V, VGS = 0 V, TJ = 125C) Gate-Body Leakage Current (VGS = 12 V, VDS = 0 V) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = -250 mA) Static Drain-to-Source On-Resistance (VGS = -4.5 V, ID = -0.75 A) (VGS = -2.5 V, ID = -0.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (VDS = -16 V, ID = -1.5 A, VGS = -4.0 V) (VDD = -5.0 V, ID = -1.0 A, RL = 5.0 W, RG = 6.0 W) td(on) tr td(off) tf QT 7.0 15 18 20 5500 pC ns (VDS = -5.0 V) (VDS = -5.0 V) (VDG = -5.0 V) Ciss Coss Crss 225 130 55 pF VGS(th) rDS(on) -0.7 -1.0 -1.25 V W V(BR)DSS IDSS -20 V mA Symbol Min Typ Max Unit -1.0 -10 100 IGSS nA 0.135 0.190 0.22 0.35 SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) (VGS = 0 V, IS = -0.6 A) Reverse Recovery Time (IS = -1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge IS ISM VSD trr ta tb QRR 16 11 5.5 0.0085 mC -0.6 -0.75 -1.0 V ns A 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 NTR1P02LT1 2.5 -ID, DRAIN CURRENT (AMPS) 2 1.5 1 0.5 0 VGS = -3 V -2.8 V -2.6 V -2.4 V -2.2 V -1.6 V -1.8 V 1.4 -ID, DRAIN CURRENT (AMPS) -2 V TJ = 25C 1.2 1 0.8 0.6 0.4 0.2 0 1 TJ = 25C TJ = 100C TJ = -55C 1.2 1.4 1.6 1.8 2 2.2 2.4 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS -10 V -1.2 V -1.4 V 0 1 2 3 4 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.04 ID = -10 A TJ = 25C 0.03 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.3 0.25 0.2 0.15 0.1 0.05 0 0.2 Figure 2. Transfer Characteristics TJ = 25C VGS = -2.5 V TJ = 100C TJ = 25C TJ = -55C 0.02 0.01 0 0 2 4 6 8 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0.3 -IDSS, LEAKAGE (nA) ID = -0.5 A VGS = -2.5 V 0.2 1000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V 100 10 1 0.1 TJ = 125C TJ = 100C 0.1 TJ = 25C 0 -50 -25 0 25 50 75 100 125 150 0.01 4 8 12 16 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTR1P02LT1 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5000 4500 C, CAPACITANCE (pF) 4000 3500 3000 2500 2000 1500 1000 500 0 15 10 5 0 Coss Crss Ciss VDS = 0V VGS = 0V TJ = 25C 6 28 QT 24 20 16 2 Q1 Q2 VDS = -16 V ID = -1.5 A TJ = 25C 1 2 3 4 12 8 4 0 4 5 10 15 20 25 -VGS -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 -IS, SOURCE CURRENT (AMPS) VDD = -16 V ID = -1 A tr 0.8 VGS = 0 V TJ = 25C 0.6 t, TIME (ns) tf 10 td(off) td(on) 0.4 0.2 1 1 10 RG, GATE RESISTANCE (W) 100 0 1.00E-01 3.00E-01 5.00E-01 7.00E-01 9.00E-01 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTR1P02LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D 3 SEE VIEW C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. E 1 2 HE c b q 0.25 e A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTR1P02LT1/D |
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